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| FDJ1032C Complementary PowerTrench(R) MOSFET February 2005 FDJ1032C Complementary PowerTrench(R) MOSFET Features Q1 -2.8 A, -20 V. RDS(ON) = 160 m @ VGS = -4.5 V RDS(ON) = 230 m @ VGS = -2.5 V RDS(ON) = 390 m @ VGS = -1.8 V RDS(ON) = 90 m @ VGS = 4.5 V RDS(ON) = 130 m @ VGS = 2.5 V General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Q2 3.2 A, 20 V. Low gate charge High performance trench technology for extremely low RDS(ON) FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications DC/DC converter Load switch Motor Driving S2 S1 G1 5 6 4 Bottom Drain Contact 3 Q2 (N) 2 1 Q1 (P) Bottom Drain Contact S1 S2 G2 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RJA RJC Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Q1 -20 8 -2.8 -12 1.5 0.9 -55 to +150 Q2 20 12 3.2 12 Units V V A W C C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1a) 80 5 (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDJ1032C Rev. B1(W) FDJ1032C Complementary PowerTrench(R) MOSFET Package Marking and Ordering Information Device Marking .H Device FDJ1032C Reel Size 7" Tape width 8mm Quantity 3000 units Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A VGS = 0 V, ID = 250 A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 -20 20 -13 13 -1 1 100 100 V mV/C A nA Parameter Test Conditions Type Min Typ Max Units Breakdown Voltage Temperature ID = -250 A, Referenced to 25C Coefficient ID = 250 A, Referenced to 25C Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V VDS = 16 V, VGS = 0 V Gate-Body Leakage VGS = 8 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = -250 A VDS = VGS, ID = 250 A ID = -250 A, Referenced to 25C ID = 250 A, Referenced to 25C VGS = -4.5 V, ID = -2.8 A VGS = -2.5 V, ID = -2.2 A VGS = -1.8 V, ID = -1.7 A VGS = -4.5 V, ID =2.8A, TJ = 125C VGS = 4.5 V, ID = 3.2 A VGS = 2.5 V, ID = 2.7 A VGS = 4.5 V, ID = 3.2, TJ = 125C On Characteristics (Note 2) VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 Q2 Q1 Q2 Q1 -0.4 0.6 -0.8 1.0 3 -3 108 163 283 150 70 100 83 5 7.5 160 230 390 238 90 130 132 S -1.5 1.5 V mV/C m Q2 gFS Forward Transconductance VDS = -5 V, ID = - 2.8 A VDS = 5 V, ID = 3.2 A Q1: VDS = -10 V, VGS = 0 V, f = 1.0 MHz Q2: VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 290 200 55 50 29 30 18 10 pF pF pF VGS = 15mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Q1: VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Q2: VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 7 13 8 13 11 18 2 16 14 23 16 23 20 32 4 ns ns ns ns 2 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Electrical Characteristics (Continued) Symbol Qg Qgs Qgd Parameter Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Q1: VDS = -10 V, ID = -2.8 A, VGS= -4.5V Q2: VDS = 10 V, ID = 3.2 A, VGS = 4.5 V Type Q1 Q2 Q1 Q2 Q1 Q2 Min Typ 3 2 0.65 0.4 0.75 1.0 Max Units 4 3 nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -1.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) IF = -4.2A, dIF/dt = 100 A/s IF = 5.9A, dIF/dt = 100 A/s IF = -4.2A, dIF/dt = 100 A/s IF = 5.9A, dIF/dt = 100 A/s Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 -0.8 0.8 14 11 4 2.5 -1.25 1.25 -1.2 1.2 A V nS nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 80C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q1 10 VGS=-4.5V 8 -2.5V 6 -3.5V 2.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V 2.4 V GS=-1.8V 2.2 2 -2.0V 1.8 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V -ID, DRAIN CURRENT (A) 4 -2.0V -1.8V 2 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 RDS(ON) , ON-RESISTANCE (OHM) 1.4 I D = -2.8A VGS = -4.5V I D = -1.4A 0.44 0.38 0.32 TA = 125C 0.26 0.2 0.14 TA = 25C 0.08 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (C) -VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 T A = -55C 25 C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS=0V 10 -ID , DRAIN CURRENT (A) 4 125 C 3 1 TA = 125C 0.1 25C 0.01 -55C 0.001 0.0001 2 1 0 0.5 1 1.5 2 2.5 -VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q1 5 500 ID = -2.8A 4 VDS = -5V -15V 3 -10V 400 f = 1 MHz VGS = 0 V CISS 300 -V GS, GATE-SOURCE VOLTAGE (V) 2 CAPACITANCE (pF) 200 COSS 100 CRSS 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 100 s RDS(ON) LIMIT 10ms 1s DC VGS = -4.5V SINGLE PULSE RJA = 140 o C/W T A = 25 oC 10s 1ms 100ms 8 SINGLE PULSE RJA = 140C/W T A = 25C 6 1 4 0.1 2 0.01 0.1 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 5 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q2 12 VGS = 4.5V 10 3.5V 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 2 VGS = 2.5V 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 12 I D, DRAIN CURRENT (A) 3.0V 3.5V 4.0V 4.5V I D, DRAIN CURRENT (A) 8 2.5V 6 4 2.0V 2 0 0 0.5 1 1.5 2 2.5 3 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.28 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 I D = 3.2A VGS = 4.5V R DS(ON) , ON-RESISTANCE (OHM) I D = 1.6A 0.24 0.2 0.16 T A = 125C 0.12 0.08 T A = 25C -25 0 25 50 75 100 125 150 0.04 1 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 13. On-Resistance Variation with Temperature. 10 25C 10 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. I S, REVERSE DRAIN CURRENT (A) V DS = 5V VGS = 0V TA = -55 C 1 TA = 125C 0.1 25C 0.01 -55C 0.001 I D , DRAIN CURRENT (A) 8 125C 6 4 2 0 1 1.5 2 2.5 3 3.5 VGS , GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 6 FDJ1032C Rev. B1(W) www.fairchildsemi.com .ngised draob tiucric eht no gnidneped egnahc lliw esnopser lamreht tneisnarT b1 etoN ni debircsed snoitidnoc eht gnisu demrofrep noitaziretcarahc lamrehT . .e vruC esnopseR lamrehT tneisnarT .12 erugiF ) ces 0001 001 01 1 ( EM T , I 1 t 1. 0 1 0. 0 100.0 ESLUP ELGNIS 1 0. 0 2 0. 0 5 0. 0 1. 0 2. 0 2 t/ 1 t )t( AJ = D ,elcyC ytuD R * P = AT - JT 2t 1t )kp( 1. 0 P I N AJ 1 . ita issi re i no p D woP m m x M l P lgn S 02 u i a es u e . eru gi F 100.0 0 .aer A gn itare pO efaS mumixaM .91 erugiF NI ) 0001 001 01 ces ( EM T , I 1 t )V( EGATLOV ECRUOS- ARD ,SD V 1.0 1 0. 0 001 01 1 1. 0 1 0. 0 1 2 4 s0 1 N I 6 8 N s m 01 sm001 s1 1 sm1 s001 TIMIL )NO(SDR C 5 2 = A T W/C041 = AJ R ESLUP ELGNIS 01 )W( REWOP T E S ART KAEP ,)kp(P 001 .scitsiretcarah Cn ec atica paC .81 erugiF 5 0 5. 2 .scitsiretcarah Cg e rah C 1 eta G .71 eru gi F 0 )V( EGATLOV ECRUOS OT ARD ,SDV NI 02 51 01 SSR C )Cn( EGRAHC ETAG ,gQ 0 05 2 5. 1 5. 0 0 1 2 SSO C 001 051 002 N I ) Fp ( E C AT C A P A C V5 1 V01 V5 = SD V A 2. 3 = D I 3 4 5 V 0 = SG V zHM1 = f 003 FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q2 )V( EGATLOV ECRUOS-ETAG ,SGV SSI C 052 )A( T ERRUC ARD ,D N NI CD Co 52 = AT W/C 041 = AJ R o ESLUP ELGNIS V 5. 4 = S G V 1. 0 01 I EC ATS SER LAMREHT T E S ART EV TCEFFE DEZ LAMRO ,) ( N I N I I N W/ C 0 4 1 = AJ R R * )t ( r = ) t( AJ R 5. 0 = D tr FDJ1032C Rev. B1(W) 7 1000.0 1 0. 0 www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Dimensional Outline and Pad Layout DRAIN 1 PKG C L 3 (0.24) (0.18) 0.30 0.20 PKG C L (0.46) DRAIN 1 6 4 (0.73) (0.50) DRAIN 2 PKG C L 0.30 MIN DRAIN 1 TERMINAL 0.20 0.84 PKG C L 0.60 0.50 MIN 2.35 MIN 1.35 6 4 Bottom View 1.70 1.50 PKG C L 6 4 A B PKG C L 1.75 1.55 1 3 0.50 1.00 1 3 DRAIN 2 TERMINAL (0.20) 0.50 1.00 0.275 0.125 0.075 M A B Recommended Landing Pattern Notes: Unless otherwise specified all dimensions are in millimeters. Top View PKG C L 0.80 0.65 0.225 0.075 PKG C L SEATING PLANE PKG 1.075 0.925 2.15 1.85 8 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 9 FDJ1032C Rev. B1(W) www.fairchildsemi.com |
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